| PART |
Description |
Maker |
| 2SK3563 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS) 东芝场效应晶体管频道马鞍山类型（饼马鞍山？）
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)
|
Toshiba, Corp.
Toshiba Semiconductor
|
| TPC8402 |
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U-MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U−MOSII)
TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (MOSVI/U−MOSII)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SK184 |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
|
Toshiba Semiconductor
|
| 2SK1717 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
Sanken electric
|
| 2SJ610 2SJ61009 |
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
|
Toshiba Semiconductor
|
| TPC8A03-H |
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
|
Toshiba Semiconductor
|
| 2SK3762 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| TPC8201 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| SSM6J207FE-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
|
Toshiba Semiconductor
|
| TPC6108 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| SSM3J130TU-14 |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
|
Toshiba Semiconductor
|
